Ivan Ivanov
机构: Medical University - Pleven
每年引用次数
引用次数
引用: 14,877
H-指数: 52
I10-指数 : 153
出版物: 299
Growth of 4H-SiC from liquid phase
R Yakimova , IG Ivanov , E Janzén , M Syväjärvi
Materials Science and Engineering B-advanced Functional Solid-state Materials 46 329 -332
10
1997
Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers
Milan Yazdanfar , Pontus Stenberg , Ian D. Booker , Ivan.G Ivanov
Materials Science Forum 251 -254
2013
Growth optimization and applicability of thick on-axis SiC layers using sublimation epitaxy in vacuum
Valdas Jokubavicius , Jianwu Sun , Xinyu Liu , Gholamreza Yazdi
Journal of Crystal Growth 448 51 -57
2
2016
3Exciton and Defect Photoluminescence from SiC
T Egilsson , Ivan Gueorguiev Ivanov , Nguyen Tien Son , Anne Henry
CRC Press 81 -120
2003
Recombination centers in as-grown and electron-irradiated ZnO substrates
N. T. Son , I. G. Ivanov , A. Kuznetsov , B. G. Svensson
Journal of Applied Physics 102 ( 9) 093504
17
2007
Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
S. Kamiyama , T. Maeda , Y. Nakamura , M. Iwaya
Journal of Applied Physics 99 ( 9) 093108
61
2006
Splitting of type-I (N-B, P-Al) and type-II (N-Al, N-Ga) donor-acceptor pair spectra in 3C-SiC
JW Sun , Ivan Gueorguiev Ivanov , Sandrine Juillaguet , Jean Camassel
Physical Review B 83 ( 19) 195201
2
2011
Excitation properties of hydrogen-related photoluminescence in 6H-SiC
T Egilsson , Anne Henry , Ivan Gueorguiev Ivanov , A Ellison
Physical Review B 62 ( 11) 7162 -7168
8
2000
Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence
E. M. Goldys , T. Paskova , I. G. Ivanov , B. Arnaudov
Applied Physics Letters 73 ( 24) 3583 -3585
30
1998
Effective-mass approximation for shallow donors in uniaxial indirect band-gap crystals and application to 4H-SiC
Ivan Gueorguiev Ivanov , A Stelmach , M Kleverman , Erik Janzén
Physical Review B 73 ( 4) 045205
11
2006
Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC
I. G. Ivanov , C. Hallin , A. Henry , O. Kordina
Journal of Applied Physics 80 ( 6) 3504 -3508
92
1996
B implantation in 6H–SiC: Lattice damage recovery and implant activation upon high-temperature annealing
E Valcheva , T Paskova , IG Ivanov , R Yakimova
Journal of Vacuum Science & Technology B 17 ( 3) 1040 -1044
5
1999
High temperature chemical vapor deposition of SiC
O. Kordina , C. Hallin , A. Ellison , A. S. Bakin
Applied Physics Letters 69 ( 10) 1456 -1458
171
1996
Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure
Anelia Kakanakova‐Georgieva , Ivan Gueorguiev Ivanov , Christer Hallin , Erik Janzén
Physica Status Solidi (a) 202 ( 5) 739 -743
1
2005
Resonant sharp hot free-exciton luminescence in 6H- and 4H-SiC due to inhibited exciton-phonon interaction
Ivan Gueorguiev Ivanov , T Egilsson , Anne Henry , Bo Monemar
Physical Review B 64 ( 8) 085203
9
2001
Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4H silicon carbide from the donor-acceptor pair emission
I. G. Ivanov , A. Henry , E. Janzén
Physical Review B 71 ( 24) 241201
65
2005
Analysis of the sharp donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum
I. G. Ivanov , B. Magnusson , E. Janzén
Physical Review B 67 ( 16) 165211
27
2003
Optical selection rules for shallow donors in 4H-SiC and ionization energy of the nitrogen donor at the hexagonal site
I. G. Ivanov , B. Magnusson , E. Janzén
Physical Review B 67 ( 16) 165212
18
2003
Hydride Vapor-Phase Epitaxial GaN Thick Films for Quasi- Substrate Applications: Strain Distribution and Wafer Bending
T. Paskova , V. Darakchieva , E. Valcheva , P. P. Paskov
Journal of Electronic Materials 33 ( 5) 389 -394
20
2004
Defects in N, O and N, Zn implanted ZnO bulk crystals
J. E. Stehr , X. J. Wang , S. Filippov , S. J. Pearton
Journal of Applied Physics 113 ( 10) 103509
26
2013