Recombination centers in as-grown and electron-irradiated ZnO substrates
作者： N. T. Son , I. G. Ivanov , A. Kuznetsov , B. G. Svensson , Q. X. Zhao
DOI: 10.1063/1.2802186
关键词:
摘要: Optical detection of magnetic resonance (ODMR) was used to study defects in ZnO substrates irradiated with 3 MeV electrons at room temperature. The Zn vacancy and some other ODMR centers were detected. Among these, the two centers, labeled as LU3 LU4, also commonly observed different types as-grown substrates. LU4 are related intrinsic act dominating recombination ZnO. © 2007 American Institute Physics.
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