引用次数
引用: 5,751
H-指数: 36
I10-指数 : 97
出版物: 308
Development and Education of Electron Devices assisted with Computer Simulation
Tanaka Takahisa , Uchida Ken
IEICE Technical Report; IEICE Tech. Rep. 118 ( 291) 7 -10
2018
招待論文 Stress and surface orientation engineering in scaled CMOSFETs considering high-field carrier transport (Silicon devices and materials)
Saitoh Masumi , Nakabayashi Yukio , Uchida Ken , NUMATA Toshinori
電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 110 ( 110) 125 -129
2010
Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
R. Ohba , R. Ohba , J. Koga , K. Uchida
IEICE Transactions on Electronics 84 ( 8) 1066 -1070
5
2001
Unified understanding of V th and I d variability in tri-gate nanowire MOSFETs
K. Ota , Y. Nakabayashi , C. Tanaka , M. Saitoh
symposium on vlsi circuits 132 -133
8
2011
Navier-Stokes prediction on performance of a Francis turbine with high specific speed
K. Sugama , T. Nagafuji , K. Tezuka , K. Uchida
American Society of Mechanical Engineers
3
1999
Device Simulation and Measurement of Hybrid SBTT
K. Matsuzawa , K. Uchida , A. Nishiyama , T. Numata
Springer, Vienna 380 -383
1
2001
A unified simulation of Schottky and ohmic contacts
K. Matsuzawa , K. Uchida , A. Nishiyama
IEEE Transactions on Electron Devices 47 ( 1) 103 -108
148
2000
Low-Power and ppm-Level Detection of Gas Molecules by Integrated Metal Nanosheets
T. Tanaka , K. Tabuchi , K. Tatehora , Y. Shiiki
symposium on vlsi circuits 158
4
2019
Spin-related tunneling in lithographically-defined silicon quantum dots
T. Kodera , G. Yamahata , T. Kambara , K. Horibe
ieee silicon nanoelectronics workshop 1 -2
2010
Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low band-to-band-tunneling (BTBT)
T. Krishnamohan , Z. Krivokapic , K. Uchida , Y. Nishi
symposium on vlsi technology 82 -83
38
2005
High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions
A. Kinoshita , C. Tanaka , K. Uchida , J. Koga
symposium on vlsi technology 2005 158 -159
258
2005
Observation of a donor-acceptor pair recombination in the edge emission of ZnSe crystal by electro-luminescence
K. Ikeda , K. Uchida , Y. Hamakawa
Journal of Physics and Chemistry of Solids 34 ( 11) 1985 -1991
9
1973
Simulations of Schottky barrier diodes and tunnel transistors
K. Matsuzawa , K. Uchida , A. Nishiyama
international workshop on computational electronics 163 -165
3
1998
Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots
G. Yamahata , T. Kodera , H. O. H. Churchill , K. Uchida
Physical Review B 86 ( 11) 115322
54
2012
High-efficiency Complementary Power Mos Pwm Driver Lsi With Low-loss Full-mode Sensing
K. Sakamoto , I. Yoshida , M. Morikawa , K. Satonaka
custom integrated circuits conference
2
1992
Co-porphyrin functionalized CVD graphene ammonia sensor with high selectivity to disturbing gases: hydrogen and humidity
K. Sawada , T. Tanaka , T. Yokoyama , R. Yamachi
Japanese Journal of Applied Physics 59
1
2020
Experimental Evidence of Gate-Induced Schottky Barrier Height Lowering due to Image Force in Gated Schottky Diodes
A. Kinoshita , K. Uchida , J. Koga
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials
4
2003
Sub-band structure engineering for advanced CMOS channels
Shin-ichi Takagi , T. Mizuno , T. Tezuka , N. Sugiyama
Solid-State Electronics 49 ( 5) 684 -694
74
2005
A Wide Range and High Accuracy Sensor Interface with Switching Regulator for Coin-Cell Powered Tiny Wireless Sensor Node.
K. Tatehora , Y. Shiiki , S. Nakagawa , T. Tanaka
international symposium on circuits and systems 1 -4
2020
MAGNETOPHOTOLUMINESCENCE SPECTROSCOPY OF ALGAP-BASED NEIGHBORING CONFINEMENT STRUCTURES
N. Usami , T. Sugita , T. Ohta , F. Issiki
Physical Review B 60 ( 3) 1879 -1883
4
1999