引用次数
引用: 5,751
H-指数: 36
I10-指数 : 97
出版物: 308
The Effect of Side Traps on Ballistic Transistor in Kondo Regime
Tetsufumi Tanamoto , Ken Uchida , Shinobu Fujita
Japanese Journal of Applied Physics 46 ( 4B) 2073 -2075
2007
Impact of defects in self-assembled monolayer on humidity sensing by molecular functionalized transistors
Takahisa Tanaka , Takeaki Yajima , Ken Uchida
Japanese Journal of Applied Physics 59
2020
Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film
Ken Uchida , Junji Koga , Ryuji Ohba , Shin-ichi Takagi
Journal of Applied Physics 90 ( 7) 3551 -3557
37
2001
Quantum Confinement Effect of Ultrathin-SOI on double-gate-nMOSFETs
Hiroshi Watanabe , Ken Uchida , Atsuhiro Kinoshita
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials
3
2003
Transient Photocurrent Elucidating Carrier Dynamics and Potential of Bulk Heterojunction Solar Cells Fabricated by Thermal Precursor Approach
Naoki Kudo , Ken Uchida , Tadaaki Ikoma , Kohtaro Takahashi
Solar RRL 2 ( 5) 1700234
2
2018
Numerical simulation study of electrostatically defined silicon double quantum dot device
Muhammad Amin Sulthoni , Tetsuo Kodera , Ken Uchida , Shunri Oda
Journal of Applied Physics 110 ( 5) 054511
2
2011
Single-electron random-number generator (RNG) for highly secure ubiquitous computing applications
Ken Uchida , Tetsufumi Tanamoto , Shinobu Fujita
Solid-State Electronics 51 ( 11-12) 1552 -1557
7
2007
Modulation of VO2 Metal–Insulator Transition by Ferroelectric HfO2 Gate Insulator
Takeaki Yajima , Tomonori Nishimura , Takahisa Tanaka , Ken Uchida
Advanced electronic materials 6 ( 5) 1901356
8
2020
Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K
Gento Yamahata , Tetsuo Kodera , Hiroshi Mizuta , Ken Uchida
Applied Physics Express 2 ( 9) 095002
28
2009
Successful measurements of Electron energy dependence of interface-trap-induced scattering in N-MOSFETs
Shigeki Kobayashi , Takamitsu Ishihara , Masumi Saitoh , Yukio Nakabayashi
international reliability physics symposium 8 -12
1
2009
Performance, variability and reliability of silicon tri-gate nanowire MOSFETs
Masumi Saitoh , Kensuke Ota , Chika Tanaka , Yukio Nakabayashi
international reliability physics symposium
6
2012
Impact of Deformation Potential Increase at Si/SiO2 Interfaces on Stress-Induced Electron Mobility Enhancement in Metal–Oxide–Semiconductor Field-Effect Transistors
Teruyuki Ohashi , Shunri Oda , Ken Uchida
Japanese Journal of Applied Physics 52
4
2013
Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors
Tsunaki Takahashi , Nobuyasu Beppu , Kunro Chen , Shunri Oda
Japanese Journal of Applied Physics 52 ( 4)
14
2013
Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons
Aya Shindome , Yu Doioka , Nobuyasu Beppu , Shunri Oda
Japanese Journal of Applied Physics 52 ( 4S) 04CN05
5
2013
Methodology for Evaluating Operation Temperatures of Fin-Type Field-Effect Transistors Connected by Interconnect Wires
Tsunaki Takahashi , Shunri Oda , Ken Uchida
Japanese Journal of Applied Physics 52 ( 6R) 064203
9
2013
Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Ken Uchida , Junji Koga , Shin-ichi Takagi
Journal of Applied Physics 102 ( 7) 074510
69
2007
Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field
Tsunaki Takahashi , Tetsuo Kodera , Shunri Oda , Ken Uchida
Journal of Applied Physics 109 ( 3) 034505
4
2011
Universal Relationship between Low-Field Mobility and High-Field Carrier Velocity in High-K and SiO 2 Gate Dielectric MOSFETs
Masumi Saitoh , Ken Uchida
international electron devices meeting 1 -4
8
2006
Key capacitive parameters for designing single-electron transistor charge sensors
Kosuke Horibe , Tetsuo Kodera , Tomohiro Kambara , Ken Uchida
Journal of Applied Physics 111 ( 9) 093715
13
2012
Carrier Transport in (110) nMOSFETs: Subband Structures, Non-Parabolicity, Mobility Characteristics, and Uniaxial Stress Engineering
Ken Uchida , Atsuhiro Kinoshita , Masumi Saitoh
international electron devices meeting 1 -3
43
2006