Numerical simulation study of electrostatically defined silicon double quantum dot device
作者： Muhammad Amin Sulthoni , Tetsuo Kodera , Ken Uchida , Shunri Oda
DOI: 10.1063/1.3627238
关键词: Quantum dot laser 、 Condensed matter physics 、 Electro-absorption modulator 、 Quantum tunnelling 、 Physics 、 Loss–DiVincenzo quantum computer 、 Quantum dot 、 Quantum dot cellular automaton 、 Quantum computer 、 Quantum point contact
摘要: Coupled quantum dots are of great interest for the application computing. The aspect needing attention is preparation well-defined with small sizes and interdot distances. We propose a novel electrostatics method to form silicon double dots. Three-dimensional numerical simulations were used confirm concept study mechanism controlling tunnel barrier using side gates. estimate electron number in each dot be less than five electrons. prospect creating ultrasmall that operate at few-electron regime, as well exhibit processing simplicity advantage this over those previously reported.
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