Generation of empirical pseudopotentials for transport applications and their application to group IV materials

Akash A. Laturia , Maarten L. Van de Put , William G. Vandenberghe
Journal of Applied Physics 128 ( 3) 034306

2020
Efficient Modeling of Electron Transport with Plane Waves

Maarten L. Van de Put , Akash A. Laturia , Massimo V. Fischetti , William G. Vandenberghe
international conference on simulation of semiconductor processes and devices

2018
Modeling of electron transport in nanoribbon devices using Bloch waves

Akash A. Laturia , Maarten L. Van de Put , Massimo V. Fischetti , William G. Vandenberghe
device research conference 1 -2

2018
Multi-scale modeling of self-heating effects in silicon nanoscale devices

S. S. Qazi , A. R. Shaik , R. L. Daugherty , A. Laturia
international conference on nanotechnology 1461 -1464

2015
Monte carlo device simulations

Katerina Raleva , Abdul R Shaik , Raghuraj Hathwar , AKash Laturia
CRC Press 773 -806

1
2017
An Intelligent Solar Tracker for Photovoltaic Panels

Aneesh Kulkarni , Tushar Kshirsagar , Akash Laturia , P. H. Ghare
2013 Texas Instruments India Educators' Conference 390 -393

4
2013
Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk

Akash Laturia , Maarten L. Van de Put , William G. Vandenberghe
npj 2D Materials and Applications 2 ( 1) 1 -7

515
2018
Author Correction: Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk

Akash Laturia , Maarten L. Van de Put , William G. Vandenberghe
npj 2D Materials and Applications 4 ( 1) 1 -4

1
2020
High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.

Guanyu Zhou , Rafik Addou , Qingxiao Wang , Shahin Honari
Advanced Materials 30 ( 36) 1803109

31
2018
Dielectric properties of mono- and bilayers determined from first principles

Akash Laturia , William G. Vandenberghe
international conference on simulation of semiconductor processes and devices 337 -340

2
2017
Two-Dimensional Materials for Electronic Devices: Transition-Metal Dichalcogenides and Topological Insulators

William Vandenberghe , Akash Laturia , Sabyasachi Tiwari , Bart Sorée
Electrochemical Society Meeting Abstracts 235 ( 23) 1192 -1192

2019
Determining Dielectric, Electronic, Magnetic, and Structural Properties of Van Der Waals Materials from First Principles

William Vandenberghe , Akash Laturia , Aaron Austin Kramer , Sabyasachi Tiwari
Electrochemical Society Meeting Abstracts 237 ( 50) 2759 -2759

2020
Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors

Mehrdad Rostami Osanloo , Ali Saadat , Maarten L Van de Put , Akash Laturia
Nanoscale 14 ( 1) 157 -165

31
2022
Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk (vol 4, pg 28, 2018)

Akash Laturia , Maarten L Van de Put , William G Vandenberghe
NPJ 2D MATERIALS AND APPLICATIONS 4 ( 1)

2020
Full Band Schrodinger Poisson Solver for DG SOI MOSFET

Akash Laturia
Arizona State University

2016
Modeling Self-Heating Effects in Nanoscale Devices

Katerina Raleva , Abdul Rawoof Shaik , Dragica Vasileska , Stephen Marshall Goodnick

3
2017