William Vandenberghe
机构: Associate Professor at U.T. Dallas, dept. Materials Science & Engineering
主页: utdallas.edu
每年引用次数
引用次数
引用: 5,821
H-指数: 36
I10-指数 : 75
出版物: 217
Boosting the on-current of silicon nanowire tunnel-FETs
Anne S. Verhulst , W.G. Vandenberghe , Stefan De Gendt , Karen Maex
ieee silicon nanoelectronics workshop 1 -2
2008
Inherent transmission probability limit between valence-band and conduction-band states and calibration of tunnel-FET parasitics
A.S. Verhulst , D. Verreck , W.G. Vandenberghe , Q. Smets
2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S) 1 -3
1
2017
Si-based tunnel field-effect transistors for low-power nano-electronics
A.S. Verhulst , W.G. Vandenberghe , D. Leonelli , R. Rooyackers
device research conference 193 -196
4
2011
Overlaps in Stacked Graphene Flakes using Empirical Pseudopotentials
Maarten Van de Put , William Vandenberge , Wim Magnus , Bart Soree
2015
Quantum transport in tunnel field-effect transistors for future nano-CMOS applications
Wiiliam Vandenberghe
PhD Thesis
9
2012
Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications
Jing Zhuge , Anne S Verhulst , William G Vandenberghe , Wim Dehaene
Semiconductor Science and Technology 26 ( 8) 085001
49
2011
Electronic transport properties of hydrogenated and fluorinated graphene: a computational study
Mohammad Mahdi Khatami , Gautam Gaddemane , Maarten L Van de Put , Mohammad Kazem Moravvej-Farshi
Journal of Physics: Condensed Matter 32 ( 49) 495502
7
2020
Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects
Sabyasachi Tiwari , Maarten L Van de Put , Bart Sorée , William G Vandenberghe
2D Materials 6 ( 2) 025011
11
2019
Magnetic properties and critical behavior of magnetically intercalated WSe2: a theoretical study
Peter D Reyntjens , Sabyasachi Tiwari , Maarten L Van de Put , Bart Sorée
2D Materials 8 ( 2) 025009
14
2020
Ab-initio study of magnetically intercalated platinum diselenide: the impact of platinum vacancies
Peter D Reyntjens , Sabyasachi Tiwari , Maarten L Van de Put , Bart Sorée
Materials 14 ( 15) 4167
2
2021
New Verbeekite-type polymorphic phase and rich phase diagram in the PdSe 2- x Te x system
Wenhao Liu , Mehrdad Rostami Osanloo , Xiqu Wang , Sheng Li
Physical Review B 104 ( 2) 024507
15
2021
Impact of passivation on the Dirac cones of 2D topological insulators
Emeric Deylgat , Sabyasachi Tiwari , William G Vandenberghe , Bart Sorée
Journal of Applied Physics 131 ( 23)
1
2022
Two-dimensional dielectrics for future electronics: hexagonal boron nitride, oxyhalides, transition-metal nitride halides, and beyond
William G Vandenberghe , Mehrdad Rostami Osanloo
ACS Applied Electronic Materials 5 ( 2) 623 -631
2023
First-principles study of electronic transport in germanane and hexagonal boron nitride
Mohammad Mahdi Khatami , Maarten L Van de Put , William G Vandenberghe
Physical Review B 104 ( 23) 235424
4
2021
The importance of the image forces and dielectric environment in modeling contacts to two-dimensional materials
Madhuchhanda Brahma , Maarten L Van de Put , Edward Chen , Massimo V Fischetti
npj 2D Materials and Applications 7 ( 1) 14
2023
Determining Electronic, Structural, Dielectric, Magnetic, and Transport Properties in Novel Electronic Materials: Using first-principles techniques
William G Vandenberghe
IEEE Nanotechnology Magazine 15 ( 6) 68 -C3
2
2021
Image-Force Barrier Lowering for Two-Dimensional Materials: Direct Determination and Method of Images on a Cone Manifold
Sarah R Evans , Emeric Deylgat , Edward Chen , William G Vandenberghe
arXiv preprint arXiv:2301.05373
2023
Atomistic modeling of spin and electron dynamics in two-dimensional magnets switched by two-dimensional topological insulators
Sabyasachi Tiwari , Maarten L Van de Put , Kristiaan Temst , William G Vandenberghe
Physical Review Applied 19 ( 1) 014040
1
2023
Image-force barrier lowering in top-and side-contacted two-dimensional materials
Emeric Deylgat , Edward Chen , Massimo V Fischetti , Bart Sorée
Solid-State Electronics 198 108458 -108458
5
2022
Modeling Contact Resistivity in Monolayer Molybdenum disulfide Edge contacts
Madhuchhanda Brahma , Maarten L Van de Put , Edward Chen , Massimo V Fischetti
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 175 -179
4
2021
Massimo V Fischetti Maarten Van de Put Bart Soree Anne S Verhulst Guido Groeseneken Sabyasachi Tiwari Akash Laturia Ali Saadat Christopher Hinkle Gautam Gaddemane Jingtian Fang Robert M. Wallace Henry L. (Hal) Edwards Devin Verreck Rafik Addou Quentin Smets Julia W.P. Hsu Yifan Nie geoffrey pourtois Manuel Quevedo-lopez