Inherent transmission probability limit between valence-band and conduction-band states and calibration of tunnel-FET parasitics

摘要: Tunnel-FETs (TFETs) can achieve a subthreshold swing smaller than 60mV/dec and are considered as promising candidates for future low-power technology nodes [1-3]. The carrier injection into the channel of TFET occurs via band-to-band tunneling (BTBT) between valence- conduction-band states. Transmission probabilities these states be properly modeled using Wentzel-Kramers-Brillouin (WKB) approximation, provided changes in electrostatic potential small compared to length unit cell. However, tunnel path highly optimized TFETs is typically less 2 nm on-state WKB approximation at its limits. In particular, predictions 100% transmission probability lengths close /tun = 0 overestimated, since mismatch not taken account.