Silicon Process Impact on 5G NR mmWave Front End Design and Performance
Chuan-Cheng Cheng , Jeremy Dunworth , Sriram Kalpat , Haitao Cheng
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) 1 -2
2
2019
Phosphorus activated NMOS using SiC process
Srinivasan Chakravarthi , Periannan R Chidambaram
15
2007
Reduction of sti corner defects during spe in semicondcutor device fabrication using dsb substrate and hot technology
Angelo Pinto , Periannan R Chidambaram , Rick L Wise
3
2010
Reduction of STI corner defects during SPE in semiconductor device fabrication using DSB substrate and hot technology
Angelo Pinto , Periannan R Chidambaram , Rick L Wise
2
2014
Method to reduce residual sti corner defects generated during spe in the fabrication of nano-scale cmos transistors using dsb substrate and hot technology
Angelo Pinto , Periannan R Chidambaram , Rick L Wise
1
2009
Semiconductor device having optimized shallow junction geometries and method for fabrication thereof
Brian E Hornung , Xin Zhang , Lance S Robertson , Srinivasan Chakravarthi
8
2006
Metal finger capacitors with hybrid metal finger orientations in stack with unidirectional metal layers
Jihong Choi , John J. Zhu , Lixin Ge , Bin Yang
5
2013
Forming a retrograde well in a transistor to enhance performance of the transistor
Srinivasan Chakravarthi , Robert C. Bowen , Haowen Bu , PR Chidambaram
63
2005
Fundamental issues concerning the microdesigning of metal-ceramic interfaces
PR Chidambaram , G.R. Edwards , D.L. Olson
Composite Interfaces 1 ( 2) 127 -140
4
1993
Probing nanoscale local lattice strains in advanced Si CMOS devices by CBED: A tutorial with recent results
Moon Kim , Jiang Huang , PR Chidambaram , Richard Irwin
ECS Transactions 2 ( 2) 541 -541
2
2006
ELSEVIER Materials Science and Engineering A206 (1996) 315
P Acosta , AT Alpas , H Anzai , JSJ Chen
Materials Science and Engineering 206 315 -315
1996
High density area efficient thin-oxide decoupling capacitor using conductive gate resistor
Lixin Ge , PR Chidambaram , Haining Yang , John Jianhong Zhu
2
2017
ELSEVIER Materials Science and Engineering A196 (1995) 275
B Bacroix , TN Baker , MD Baldwin , PF Becher
Materials Science and Engineering 196 275 -275
1995
Forming a retrograde well in a transistor to enhance performance of the transistor
Srinivasan Chakravarthi , PR Chidambaram , Robert C Bowen , Haowen Bu
127
2006
Fabrication of abrupt ultra-shallow junctions using angled PAI and fluorine implant
PR Chidambaram , Amitava Chatterjee , Srinivasan Chakravarthi
44
2004
Semiconductor device fabrication methods for inhibiting carbon out-diffusion in wafers having carbon-containing regions
Majid Movahed Mansoori , Donald S Miles , Srinivasan Chakravarthi , PR Chidambaram
27
2004
Process for retarding lateral diffusion of phosphorous
Srinivasan Chakravarthi , PR Chidambaram
16
2004
Phosphorus activated NMOS using SiC process
Srinivasan Chakravarthi , PR Chidambaram
8
2011
P-doped region with improved abruptness
PR Chidambaram , Srinivasan Chakravarthi , Mahalingam Nandakumar , Manoj Mehrotra
7
2008
System and method for improved dopant profiles in CMOS transistors
PR Chidambaram , Srinivasan Chakravarthi
7
2006