引用次数
引用: 382
H-指数: 10
I10-指数 : 12
出版物: 66
Formation Mechanism, Structural and Optoelectronic Properties of As 2 Se 3 /CdS Heterojunctions Prepared by Physical Vapor Deposition Technique
Najla M. Khusayfan , Hazem K. Khanfar
Journal of Electronic Materials 48 ( 7) 4368 -4374
4
2019
Current transport mechanism in Au-p-MgO-Ni Schottky device designed for microwave sensing
AF Qasrawi , HK Khanfar
J. Optoelectron. Adv. Mater 18 ( 7-8) 639 -644
2
2016
Voltage and frequency controlled Ge/SeO2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sources
AF Qasrawi , HK Khanfar
Chalcogenide Letters
1
2023
Design Principles for Quarter-Wave Retarders that Employ Total Internal Reflection and Light Int erference in a Single-Layer Coating
RMA Azzam , HK Khanfar
Jordan Journal of Physics 2 ( 3) 157 -163
2009
High-speed characteristics of tunnelling injection and excited-state emitting InAs/GaAs quantum dot lasers
O. Qasaimeh , H. Khanfar
IEE Proceedings - Optoelectronics 151 ( 3) 143 -150
7
2004
Design and characterization of Yb/p-SiO2/(Yb, In) thin-film transistors for 5G resonators
Atef Fayez Qasrawi , Hazem Khulqi Khanfar , Sara Bassam Alyat ,
Brazilian Journal of Physics 52 ( 2) 37 -37
5
2022