Prof. Dr. Hayriye Gökçen Çetinkaya
机构: GAZİ ÜNİVERSİTESİ
每年引用次数
引用次数
引用: 550
H-指数: 14
I10-指数 : 17
出版物: 49
On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity
H. G. Çetinkaya , D. E. Yıldız , Ş. Altındal
International Journal of Modern Physics B 29 ( 01) 1450237
6
2015
A comparative study on the electrical parameters of Au/n-Si Schottky diodes with and without interfacial (Ca1.9Pr0.1Co4Ox) layer
A. Kaya , H. G. Çetinkaya , Ş. Altındal , İ. Uslu
International Journal of Modern Physics B 30 ( 16) 1650090
11
2016
Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-Ca 1.9 Pr 0.1 Co 4 O x /n-Si structures at forward biases using impedance spectroscopy analysis
H. G. Çetinkaya , Sahar Alialy , Ş. Altındal , A. Kaya
Journal of Materials Science: Materials in Electronics 26 ( 5) 3186 -3195
21
2015
Frequency and Voltage Dependent Profile of Dielectric Parameters and Electric Modulus for Al/(HgS-PVA)/p-Si Capacitor via Impedance Spectroscopy Method
H. G. Çetinkaya
Journal of Nanoelectronics and Optoelectronics 13 ( 3) 421 -427
1
2018
Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene+Ca1.9Pr0.1Co4Ox-doped poly(vinyl alcohol)) interfacial layer
H. G. Çetinkaya , Ş. Altındal , I. Orak , I. Uslu
Journal of Materials Science: Materials in Electronics 28 ( 11) 7905 -7911
36
2017
The barrier height (BH) and ideality factor (n) distribution in identically prepared Al/ Bi3Ti4O12/n-Si (MFS) structures
Hayriye Gökçen Çetinkaya
Gazi University Journal of Science Part C: Design and Technology 5 ( 3) 89 -96
2017
The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics
Hayriye Gökçen Çetinkaya , Ömer Sevgili , Şemsettin Altındal
Physica B-condensed Matter 560 91 -96
33
2019
Vertical CdTe: PVP/p-Si-based temperature sensor by using aluminum anode schottky contact
Hayriye Gökçen Çetinkaya , Osman Cicek , Şemsettin Altındal , Yosef Badali
IEEE Sensors Journal 22 ( 23) 22391 -22397
19
2022
Frequency-dependent electrical parameters and extracted voltage-dependent surface states in Al/DLC/p-Si structure using the conductance method
YASEMİN Şafak Asar , A Feizollahi Vahid , N Basman , Hayriye Gökçen Çetinkaya
Applied Physics A 129 ( 5) 358 -358
12
2023
Doping rate, interface states and polarization effects on dielectric properties, electric modulus, and AC conductivity in PCBM/NiO: ZnO/p-Si structures in wide frequency range
S Demirezen , HG Çetinkaya , Ş Altındal
Silicon 14 ( 14) 8517 -8527
10
2022
git and $ c S. Altindal
E Maril , A Kaya , HG Çetinkaya , S Koçyi
Mater. Sci. Semicond. Process 39 332 -332
4
2015
Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications
S Demirezen , A Dere , HG Çetinkaya , AG Al-Sehemi
Physica Scripta 98 ( 11) 115916 -115916
2
2023
The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3: PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate temperatures
S Demirezen , A Arslan Alsaç , HG Çetinkaya , Ş Altındal
Journal of Materials Science: Materials in Electronics 34 ( 14) 1186 -1186
12
2023
Optoelectronic characterization of Bi-doped ZnO nanocomposites for Schottky interlayer applications
A Demirci , HG Çetinkaya , P Durmuş , S Demirezen
Physica B: Condensed Matter 670 415338 -415338
3
2023
The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/(% 0.5 Bi: ZnO)/p-Si/Au (MIS) Structures
HG Çetinkaya , S Bengi , PERİHAN Durmuş , S Demirezen
Silicon 16 ( 5) 2315 -2322
1
2024
The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures
HG Çetinkaya , S Bengi , O Sevgili , Ş Altındal
Physica Scripta 99 ( 2) 025955 -025955
1
2024
Examination of Electrical and Dielectric Parameters of Au/n-Si Schottky Barrier Diodes (SBDs) with Organic Perylene Interlayer Using Impedance Measurements Under Various Illumination Intensities
S Bengi , HG Çetinkaya , Ş Altındal , S Zeyrek
Journal of Electronic Materials 1 -11
2024
Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with% 0.5 Bi: ZnO interfacial layer
S Bengi , HG Çetinkaya , Ş Altındal , PERİHAN Durmuş
Ionics 1 -9
2024
On the negative capacitance behavior in the forward bias of/n-4-(MS) and comparison between MS and 2/n-4-(MIS) type diodes both in dark and under 200 W illumination intensity.
HG Çetinkaya , DE Yıldız , Ş Altındal
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics 29 ( 1)
2015
On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2% graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure
E Marıl , A Kaya , HG Çetinkaya , S Koçyiğit
Materials Science in Semiconductor Processing 39 332 -338
28
2015