Fabian Klüpfel
机构: Inst. f. Exp. Physik II, Universität Leipzig
每年引用次数
引用次数
引用: 332
H-指数: 10
I10-指数 : 10
出版物: 29
Process Variability for Devices at and beyond the 7 nm Node
M. Nedjalkov , J. K. Lorenz , A. Asenov , E. Baer
ECS Journal of Solid State Science and Technology 7 ( 11) 595
2
2018
Low frequency noise of ZnO based metal-semiconductor field-effect transistors
F. J. Klüpfel , H. von Wenckstern , M. Grundmann
Applied Physics Letters 106 ( 3) 033502
7
2015
Strain distribution in bent ZnO microwires
C. P. Dietrich , M. Lange , F. J. Klüpfel , H. von Wenckstern
Applied Physics Letters 98 ( 3) 031105
39
2011
Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors
F. J. Klüpfel , A. Lajn , H. Frenzel , H. von Wenckstern
Journal of Applied Physics 109 ( 7) 074515
3
2011
Oxide bipolar electronics: materials, devices and circuits
Marius Grundmann , Fabian Klüpfel , Robert Karsthof , Peter Schlupp
Journal of Physics D 49 ( 21) 213001
96
2016
Process Variability-Technological Challenge and Design Issue for Nanoscale Devices.
Jürgen Lorenz , Eberhard Bär , Sylvain Barraud , Andrew Brown
Micromachines 10 ( 1) 6
6
2018
CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications
Johannes von Borany , Hans-Juergen Engelmann , Karl-Heinz Heinig , Esteve Amat
Semiconductor Science and Technology 38 ( 5) 055011 -055011
2023
Process Variability—Technological Challenge and Design Issue for Nanoscale Devices
Jürgen Lorenz , Eberhard Bär , Sylvain Barraud , Andrew Brown
Micromachines 10 ( 1) 6 -6
14
2019
3D simulation of silicon-based single-electron transistors
F. J. Klupfel , P. Pichler
international conference on simulation of semiconductor processes and devices 77 -80
5
2017
An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs
M. Albrecht , F. J. Klupfel , T. Erlbacher
IEEE Transactions on Electron Devices 67 ( 3) 855 -862
2
2020
Simulation of silicon-dot-based single-electron memory devices
F. J. Klupfel , A. Burenkov , J. Lorenz
international conference on simulation of semiconductor processes and devices 237 -240
1
2016
A Compact Model Based on Bardeen’s Transfer Hamiltonian Formalism for Silicon Single Electron Transistors
Fabian J. Klupfel
IEEE Access 7 84053 -84065
2
2019
Influence of Sacrificial Layer Germanium Content on Stacked-Nanowire FET Performance
Fabian J. Klupfel
IEEE Access 7 85855 -85859
2019
From devices to circuits: modelling the performance of 5nm nanosheets
Andrew R. Brown , Campbell Millar , Jurgen K. Lorenz , Liping Wang
international conference on simulation of semiconductor processes and devices
2019
Study of the manufacture uncertainty impact of the hybrid SET-FET circuit
F. Perez-Murano , J. Bausells , E. Amat , F. Klupfel
joint international eurosoi workshop and international conference on ultimate integration on silicon
2020
Influence of Quantum Dot Characteristics on the Performance of Hybrid SET-FET Circuits
E. Amat , F. Klupfel , J. Bausells , F. Perez-Murano
IEEE Transactions on Electron Devices 66 ( 10) 4461 -4467
10
2019
Quantum dot location relevance into SET-FET circuits based on FinFET devices
E. Amat , A. del Moral , J. Bausells , F. Perez-Murano
conference on design of circuits and integrated systems 1 -5
2018
Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors
Cristina Medina-Bailon , Tapas Dutta , Fabian Klupfel , Sylvain Barraud
international conference on simulation of semiconductor processes and devices
2019
Metal-semiconductor field-effect transistor and intgrated circuits based on ZnO and related oxides
Heiko Frenzel , Michael Lorenz , Friedrich-L Schein , Alexander Lajn
Handbook of Zinc Oxide and related Materials 2
3
2013
Strain distribution in ZnO microwires
Christof P Dietrich , Martin Lange , Fabian J Kluepfel , Ruediger Schmidt-Grund
Verhandlungen der Deutschen Physikalischen Gesellschaft
2011