Defect Complexes in Highly Mg‐Doped GaN Studied by Raman Spectroscopy
A. Kaschner , G. Kaczmarczyk , A. Hoffmann , C. Thomsen
Physica Status Solidi B-basic Solid State Physics 216 ( 1) 551 -555
5
1999
Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers
L. Eckey , U. von Gfug , J. Holst , A. Hoffmann
Journal of Applied Physics 84 ( 10) 5828 -5830
83
1998
Origin and length scale of carrier localisation in GaInAsN analysed by transmission electron microscopy
M. Albrecht , T. Remmele , V. Grillo , H.P. Strunk
ieee international symposium on compound semiconductors 63 -64
2003
Excitons and Phonons in GaN. Magnetooptical and Spatially Resolved Investigations
A. Hoffmann , L. Eckey , H. Siegle , A. Kaschner
Acta Physica Polonica A 94 ( 2) 125 -137
1998
Time-resolved microphotoluminescence of epitaxial laterally overgrown GaN
J. Holst , A. Kaschner , A. Hoffmann , P. Fischer
Applied Physics Letters 75 ( 23) 3647 -3649
13
1999
Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations
G. Kaczmarczyk , A. Kaschner , S. Reich , A. Hoffmann
Applied Physics Letters 76 ( 15) 2122 -2124
93
2000
Temporal evolution of resonant Raman-scattering in ZnCdSe quantum dots
A. Kaschner , M. Strassburg , A. Hoffmann , C. Thomsen
Applied Physics Letters 76 ( 19) 2662 -2664
5
2000
Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples
A. Kaschner , A. Hoffmann , C. Thomsen , F. Bertram
Applied Physics Letters 76 ( 23) 3418 -3420
32
2000
Impurity-induced modes of Mg, As, Si, and C in hexagonal and cubic GaN
G. Kaczmarczyk , A. Kaschner , A. Hoffmann , C. Thomsen
Physical Review B 61 ( 8) 5353 -5357
54
2000
Impact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence Spectroscopy
J. Holst , A. Kaschner , Andreas Hoffmann , I. Broser
Materials Science Forum 1575 -1578
2000
Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO2 and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy
F. Bertram , T. Riemann , D. Rudloff , J. Christen
Materials Science Forum 1483 -1486
2000
Stress analysis of selective epitaxial growth of GaN
Q. K. K. Liu , A. Hoffmann , H. Siegle , A. Kaschner
Applied Physics Letters 74 ( 21) 3122 -3124
53
1999
Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy
F. Bertram , T. Riemann , J. Christen , A. Kaschner
Applied Physics Letters 74 ( 3) 359 -361
167
1999
Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy
A. Kaschner , H. Siegle , G. Kaczmarczyk , M. Straßburg
Applied Physics Letters 74 ( 22) 3281 -3283
84
1999
Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN
A. Kaschner , A. Hoffmann , C. Thomsen , F. Bertram
Applied Physics Letters 74 ( 22) 3320 -3322
48
1999
Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates
T. Riemann , J. Christen , A. Kaschner , A. Laades
Applied Physics Letters 80 ( 17) 3093 -3095
15
2002
Nitrogen-related local vibrational modes in ZnO:N
A. Kaschner , U. Haboeck , Martin Strassburg , Matthias Strassburg
Applied Physics Letters 80 ( 11) 1909 -1911
394
2002
Optical micro-characterization of group-III-nitrides: correlation of structural, electronic and optical properties
J. Christen , T. Riemann , F. Bertram , D. Rudloff
physica status solidi (c) 0 ( 6) 1795 -1815
13
2003
Local vibrational modes and compensation effects in Mg-doped GaN
A. Hoffmann , A. Kaschner , C. Thomsen
physica status solidi (c) 0 ( 6) 1783 -1794
24
2003
Nitrogen doping in bulk and epitaxial ZnO
A. Zeuner , H. Alves , J. Sann , W. Kriegseis
Physica Status Solidi (c) 1 ( 4) 731 -734
25
2004