Origin and length scale of carrier localisation in GaInAsN analysed by transmission electron microscopy
作者： M. Albrecht , T. Remmele , V. Grillo , H.P. Strunk , A. Kaschner
DOI: 10.1109/ISCS.2003.1239907
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摘要: In this article, the optical and structural analysis of carrier localisation in InGaAsN quantum wells is described. Cathodoluminescence, GaInAsN layers were analysed by transmission electron microscopy. have been grown molecular beam epitaxy.
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