(Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
作者： P. J. Klar , H. Grüning , J. Koch , S. Schäfer , K. Volz
DOI: 10.1103/PHYSREVB.64.121203
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摘要: An intrinsic property of quaternary alloys ${A}_{1\ensuremath{-}y}{B}_{y}{C}_{1\ensuremath{-}x}{D}_{x} (x\ensuremath{\approx}1\char21{}3%)$ with D being an isovalent trap is reported: a set discrete band gaps occurs due to substitution the on sites different nearest-neighbor environments. Exemplary, this phenomenon demonstrated for (Ga,In)(N,As) by experiment and explained tight-binding supercell calculations. The gap nitrogen-poor alloy blueshifted simply moving nitrogen traps from Ga-ligand rich In-ligand sites, without changing composition.
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