BINHUI HU
机构: National Institute of Standards and Technology, and the Joint Quantum Institute, University of
每年引用次数
引用次数
引用: 263
H-指数: 8
I10-指数 : 8
出版物: 15
High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces
Tomasz M. Kott , Binhui Hu , B. E. Kane , Robert N. McFarland
Applied Physics Letters 100 ( 25) 252107
5
2012
Field Emission Properties of a Potassium-Doped Multiwalled Carbon Nanotube Tip
Binhui Hu , Peng Li , Jien Cao , Hongjie Dai
Japanese Journal of Applied Physics 40 5121 -5122
7
2001
Valley-degenerate two-dimensional electrons in the lowest Landau level
Tomasz M. Kott , Binhui Hu , S. H. Brown , B. E. Kane
Physical Review B 89 ( 4) 041107
34
2014
Effect of device design on charge offset drift in Si/SiO2 single electron devices.
Binhui Hu , Erick D. Ochoa , Daniel Sanchez , Justin K. Perron
Journal of Applied Physics 124 ( 14) 144302
2
2018
Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide.
Scott W. Schmucker , Pradeep N. Namboodiri , Ranjit Kashid , Xiqiao Wang
Physical review applied 11 ( 3) 034071
13
2019
Electron spin blockade and singlet-triplet transition in a silicon single electron transistor
Binhui Hu , C. H. Yang
Physical Review B 80 ( 7) 075310
18
2009
Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor
Binhui Hu , MM Yazdanpanah , BE Kane , EH Hwang
Phys. Rev. Lett. 115 036801 -036801
10
2015
Single electron transistor in pure silicon
Binhui Hu
University of Maryland, College Park
2009
Field emission property of highly ordered monodispersed carbon nanotube arrays
ZH Yuan , H Huang , HY Dang , JE Cao
Applied Physics Letters 78 ( 20) 3127 -3129
99
2001
Enhancement-mode metal-oxide-semiconductor single-electron transistor on pure silicon
GM Jones , BH Hu , CH Yang , MJ Yang
Applied Physics Letters 89 ( 7) 073106
9
2006
Observation of one-electron charge in an enhancement-mode InAs single-electron transistor at 4.2 K
GM Jones , BH Hu , CH Yang , MJ Yang
Applied Physics Letters 88 ( 19) 192102
4
2006
A cryogenic voltage amplifier with 36MHz bandwidth using discrete GaAs metal-semiconductor field-effect transistors
BH Hu , CH Yang ,
Review of Scientific Instruments 76 ( 12) 124702
7
2005
On-demand single-photon source using a nanoscale metal?insulator?semiconductor capacitor
BH Hu , CH Yang , MJ Yang ,
Nanotechnology 16 ( 8) 1354 -1357
4
2005
Enhancement-mode quantum transistors for single electron spin
GM Jones , BH Hu , CH Yang , MJ Yang
Physica E-low-dimensional Systems & Nanostructures 34 ( 1) 612 -615
2
2006
An enhancement-mode GaAs heterojunction transistor using benzocyclobutene as gate dielectric
GM Jones , BH Hu , CH Yang , MJ Yang
Journal of Applied Physics 100 ( 1) 014508
1
2006