Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide.
作者： Scott W. Schmucker , Pradeep N. Namboodiri , Ranjit Kashid , Xiqiao Wang , Binhui Hu
DOI: 10.1103/PHYSREVAPPLIED.11.034071
关键词:
摘要: … contact area and the restrictive thermal budget necessary to maintain the integrity of the δ layer make developing a robust electrical contact … a method for electrical contact using Pd2Si …
sci-hub.se 参考文章(41)
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