Transmission electron microscopy and X-ray diffraction investigation of phase formation and transition between Pd2Si and PdSi in Pd thin films on (111)Si

摘要: Abstract Phase formation and transition between Pd 2 Si PdSi in thin films on (111)Si has been investigated by X-ray diffraction transmission electron microscopy. In as-deposited 200 °C/1 h annealed Pd(30nm)/(lll)Si samples, epitaxial was found to coexist with the unreacted layer. samples at 250–800 °C, is only suicide phase present. form along 850 °C. be predominant 900–1000 were stable phases 300–800 850–875 respectively. The reversible. 900 initially present; then polycrystalline becomes dominant phase. After annealing for more than 240 s, predominates over PdSi. peculiar PdSi, back behavior correlated of islands, which thought alter order total energy system.