Epitaxial growth and thermal stability of thin Pd2Si films on (001), (011) and (111) Si
作者： J.F. Chen , L.J. Chen
DOI: 10.1016/S0040-6090(95)06520-2
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摘要: Epitaxial growth and thermal stability of Pd2Si on (001), (011), (111)Si substrates have been investigated by transmission electron microscopy, X-ray diffraction sheet resistance measurements. Pd2Si was found to be most stable in (111) samples. Full surface coverage observed samples annealed at 800 °C for 1 h. The general trends the are similar (001) (011) Agglomeration start a temperature as low 600 °C. laterally uniform island formation high temperatures attributed extensive epitaxial regions. The four different modes epitaxy silicon analyzed. prominence certain mode correspond good lattice match with substrate. Sheet data were correlate well morphological microstructural observations.
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