Reversible phase transformation in the Pd2Si‐PdSi thin‐film system
作者： B. Y. Tsaur , M‐A. Nicolet
DOI: 10.1063/1.92054
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摘要: The thermal stability of thin PdSi films has been studied at temperatures ranging between 300 and 700 °C. PdSi, when in contact with crystalline Si, transforms into Pd2Si Si 500–700 °C, a process contrary to the equilibrium‐phase diagram. rate transformation was found depend on structure orientation Si. Upon heating above 750 °C, back PdSi. However, is stable against annealing or an inert substrate SiO2. We propose that decomposition presence due lower interface energy Pd2Si‐Si compared PdSi‐Si interface.
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