Formation kinetics and structure of Pd2Si films on Si

摘要: Abstract Backscattering and X-ray techniques have been used to study properties of palladium silicide (Pd2Si) formed by evaporating thin Pd layers on Si followed heat treatment. The rate formation Pd2Si in the temperature range 200–275°C has measured 2-MeV 4He+ ion backscattering. layer is found grow at a proportional square root time for thicknesses ranging from approximately 200–4000 A. growth be independent substrate orientation or doping type constant fit single activation energy Ea = 1·5±0·1 eV over measured. diffraction indicates structure with basal plane roughly parallel surface films 〈111〉, 〈110〉, 〈100〉 evaporated (amorphous) silicon substrates. degree preferred markedly stronger [111] Si. Ion channeling measurements confirm that this case c-direction direction underlying