Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures
作者： G. Y. Robinson , D. J. Fertig
DOI: 10.1080/10408437508243487
关键词: Materials science 、 Spectroscopy 、 Inorganic chemistry 、 Optoelectronics 、 Silicide 、 Auger electron spectroscopy 、 Semimetal 、 Silicon 、 Etching 、 Electron spectroscopy 、 Sputtering
摘要: The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy metal-semiconductor interface is presented. physical basis, measurement techniques, and data interpretation analysis thin-film structures are briefly reviewed. Results a detailed study an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs summarized to illustrate how electrical metallurgical properties can be correlated using AES. In addition, results growth kinetics chemical phase identification palladium silicide single-crystal Si given, as well initial aluminum-palladium interaction at elevated temperature. (auth)
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