Auger electron spectroscopy and sputter etching of Ni/Au-Ge on n-GaAs
作者： G.Y. Robinson , N.L. Jarvis
DOI: 10.1063/1.1654237
关键词:
摘要: A new diagnostic technique was used to examine the alloying behavior of Ni/Au–Ge Ohmic contact n‐type GaAs. By combining Auger electron spectroscopy with sputter etching, depth‐composition profiles Ni, Au, Ge, Ga, and As were obtained for alloyed unalloyed samples. Gallium out‐diffusion surface accumulation during observed. The degree Ga as well redistribution in region found depend on orientation GaAs substrate. It shown that overlaying Ni film does not cover Au–Ge uniformly alloying.
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(8)
J. Gyulai, J. W. Mayer, V. Rodriguez, A. Y. C. Yu, H. J. Gopen, Alloying Behavior of Au and Au–Ge on GaAs Journal of Applied Physics. ,vol. 42, pp. 3578- 3585 ,(1971) , 10.1063/1.1660773
J. S. Harris, Y. Nannichi, G. L. Pearson, G. F. Day, Ohmic Contacts to Solution‐Grown Gallium Arsenide Journal of Applied Physics. ,vol. 40, pp. 4575- 4581 ,(1969) , 10.1063/1.1657234
P. W. Palmberg, Use of Auger Electron Spectroscopy and Inert Gas Sputtering for Obtaining Chemical Profiles Journal of Vacuum Science and Technology. ,vol. 9, pp. 160- 163 ,(1972) , 10.1116/1.1316542
J. Gyulai, J. W. Mayer, I. V. Mitchell, V. Rodriguez, OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE Applied Physics Letters. ,vol. 17, pp. 332- 334 ,(1970) , 10.1063/1.1653422
Chuan C. Chang, Auger electron spectroscopy Surface Science. ,vol. 25, pp. 53- 79 ,(1971) , 10.1016/0039-6028(71)90210-X
Nils Laegreid, G. K. Wehner, Sputtering Yields of Metals for Ar+ and Ne+ Ions with Energies from 50 to 600 ev Journal of Applied Physics. ,vol. 32, pp. 365- 369 ,(1961) , 10.1063/1.1736012
M. L. Tarng, G. K. Wehner, Auger Electron Spectroscopy Studies of Sputter Deposition and Sputter Removal of Mo from Various Metal Surfaces Journal of Applied Physics. ,vol. 43, pp. 2268- 2272 ,(1972) , 10.1063/1.1661490
N. Braslau, J.B. Gunn, J.L. Staples, Metal-semiconductor contacts for GaAs bulk effect devices Solid-state Electronics. ,vol. 10, pp. 381- 383 ,(1967) , 10.1016/0038-1101(67)90037-8