Alloying Behavior of Au and Au–Ge on GaAs
作者： J. Gyulai , J. W. Mayer , V. Rodriguez , A. Y. C. Yu , H. J. Gopen
DOI: 10.1063/1.1660773
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摘要: Although Au–Ge has often been used in making Ohmic contacts to GaAs, the alloying behavior of this system not well characterized and understood. In paper Au layers on GaAs was investigated as a function processing temperature (400–600°C) time by backscattering channeling‐effect measurements with 2‐MeV 4He ions. Scanning electron microscopy current‐voltage evaluations were also made. Similarities are found both systems: There is deeply penetrating component into that remains essentially unaltered once surface consumed; disordered region near found, amount which increased process times. No significant substitutional or tetrahedral interstitial sites within about 3000 A surface. The presence Ge does have effect: Complete occurs at lower temperatures, formed. Scanning‐electron‐microcope displays in...
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