Atomic scale investigation of enhanced ferroelectricity in (Ba,Ca)TiO3
Xiao Na Zhu , Xing Chen , He Tian , Xiang Ming Chen
RSC Advances 7 ( 36) 22587 -22591
3
2017
Enhanced energy storage density and its variation tendency in CaZrxTi1−xO3 ceramics
Hai Yang Zhou , Xiao Na Zhu , Guang Rong Ren , Xiang Ming Chen
Journal of Alloys and Compounds 688 687 -691
24
2016
Dielectric and ferroelectric characteristics of Ba4Pr2Fe2Nb8O30 tungsten bronze ceramics
Ting Ting Gao , Wang Chen , Xiao Na Zhu , Xiao Li Zhu
Materials Chemistry and Physics 181 ( 181) 47 -53
9
2016
Piezoelectric and Dielectric Properties of Multilayered BaTiO3/(Ba,Ca)TiO3/CaTiO3 Thin Films
Xiao Na Zhu , Ting Ting Gao , Xing Xu , Wei Zheng Liang
ACS Applied Materials & Interfaces 8 ( 34) 22309 -22315
11
2016
Enhanced dielectric and ferroelectric characteristics in Ca-modified BaTiO3 ceramics
Xiao Na Zhu , Wei Zhang , Xiang Ming Chen ,
AIP Advances 3 ( 8) 082125
46
2013
Ferroelectric domain structure evolution in Ba(Zr0.1Ti0.9)O3/(Ba0.75Ca0.25)TiO3 heterostructures
Xiao Na Zhu , Xing Xu , Zach Harrell , Ruyan Guo
RSC Advances 5 ( 81) 65811 -65817
1
2015
Conductive, dielectric and magnetic properties of Y-substituted LaFeO3 ceramics
Ting Ting Gao , Xiao Na Zhu , Jing Chen , Xiao Qiang Liu
Journal of Alloys and Compounds 792 665 -672
5
2019
Effect of Ca substitution sites on dielectric properties and relaxor behavior of Ca doped barium strontium titanate ceramics
Chao Chen , Hourong Zhuang , Xiaona Zhu , Dou Zhang
Journal of Materials Science: Materials in Electronics 26 ( 4) 2486 -2492
12
2015
Enhancement of relaxor properties by Nb doping in Ba0.8Sr0.12Ca0.08TiO3 lead-free ferroelectric ceramics
Chao Chen , Hourong Zhuang , Xiaona Zhu , Kechao Zhou
Ceramics International 41 ( 8) 9893 -9898
12
2015
HD SRAM bitcell size shrink beyond 7nm node by CFET without EUV
Rongzheng Ding , Yanli Li , Yang Liu , Qiang Wu
Smpte Journal 1 -4
1
2021
CFET 6T HD SRAM Designs with 3nm Design Rule
Xiaona Zhu , RongZheng Ding , Yanli Li , Qiang Wu
Smpte Journal 1 -4
2022
Symmetry of ferroelectric switching and domain walls in hafnium dioxide
Guo-Dong Zhao , Xingen Liu , Wei Ren , Xiaona Zhu
Physical Review B 106 ( 6) 064104
1
2022
Impact of Lanthanum-Induced Dipoles on the Tunneling and Dielectric Properties of Gate-Stack
Zhongshan Xu , Guo-Dong Zhao , Rongzheng Ding , Yage Zhao
IEEE Transactions on Electron Devices 70 ( 4) 1589 -1594
2023
Ferroelectric hafnia as an ionic conductor
Guo-Dong Zhao , Xingen Liu , Zhongshan Xu , Wei Ren
Smpte Journal
2023
The Device and Circuit Level Benchmark of Si-Based Cold Source FETs for Future Logic Technology
Guodong Qi , Weizhuo Gan , Lijun Xu , Jiangtao Liu
IEEE Transactions on Electron Devices 69 ( 6) 3483 -3489
2022
Analytical model of CFET parasitic capacitance for advanced technology nodes
Bingqi Sun , Zhongshan Xu , Rongzheng Ding , Jingwen Yang
IEEE Transactions on Electron Devices 69 ( 3) 936 -941
3
2022
Oxygen vacancies stabilized 180 charged domain walls in ferroelectric hafnium oxide
Zhongshan Xu , Xiaona Zhu , Guo-Dong Zhao , David Wei Zhang
Applied Physics Letters 124 ( 1)
2
2024
Ferroelectric hafnia as an intrinsic ionic conductor
Guo-Dong Zhao , Xingen Liu , Zhongshan Xu , Wei Ren
Preprint at https://arxiv. org/abs/2302.02874
1
2023
Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network
Yage Zhao , Zhongshan Xu , Huawei Tang , Yusi Zhao
Micromachines 15 ( 2) 218 -218
2
2024
Impact of Random Dipole Fluctuation-Induced Variation on Nanosheet Devices
Yage Zhao , Zhongshan Xu , Guo-Dong Zhao , Rongzheng Ding
IEEE Electron Device Letters
1
2023