Block read count voltage adjustment

摘要: Disclosed in some examples, are methods, systems, and machine readable mediums which compensate for read-disturb effects by shifting the read voltages used to value a NAND cell based upon counter. For example, memory device may have counter that corresponds group of cells (e.g., page, block, superblock). Anytime is read, be incremented. The voltage, Vread, adjusted on account disturb voltage.