Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance
作者： Sang-Wan Nam , Won-Taeck Jung
DOI:
关键词: Computer hardware 、 Computer science 、 Transistor 、 Selection (genetic algorithm) 、 Line (text file) 、 String (computer science) 、 Voltage 、 Electrical engineering 、 Non-volatile memory 、 Interval (graph theory)
摘要: A nonvolatile memory device performs a read operation comprising first and second intervals. In the interval applies turn-on voltage to string selection lines ground connected transistors transistors, respectively. interval, turn-off unselected while continuing apply selected line line. both intervals, wordline cells be by applying wordlines among not operation.
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