Three dimensional stacked nonvolatile semiconductor memory
作者： Hiroshi Maejima
DOI:
关键词: Set (abstract data type) 、 Semiconductor memory 、 Word (computer architecture) 、 Transfer (computing) 、 Computer hardware 、 Engineering 、 Block (programming) 、 Memory cell
摘要: A three dimensional stacked nonvolatile semiconductor memory according to an example of the present invention includes a cell array comprised first and second blocks. The block has unit which be programmed does not include programmed, programming is executed by applying program potential or transfer word lines in after initial channels cells units set plus potential. In programming, are applied block.
google.de 参考文章(56)
Hassan Bazargan, Atul Ghia, Jian Tan, Suresh Menon, Ketan Sodha, Jason R. Bergendahl, Paul T. Sasaki, Qi Zhang, Multi-purpose source synchronous interface circuitry ,(2004)
Seung-Won Lee, Nonvolatile memory device and erasing method ,(2008)
Sung-Soo Lee, Hyun-Chul Cho, Young-Ho Lim, Dong-Hyuk Chae, Page-buffer and non-volatile semiconductor memory including page buffer ,(2005)
Haruki Toda, Phase change memory device ,(2003)
Kiyohito Nishihara, Makoto Mizukami, Depletion-type nand flash memory ,(2009)
Paolo Rolandi, Luigi Pascucci, Non-volatile memory electronic device with NAND structure being monolithically integrated on semiconductor ,(2006)
Igor G. Kouznetzov, Thomas H. Lee, Christopher J. Petti, Andrew J. Walker, Rail stack array of charge storage devices and method of making same ,(2004)
Hong-Soo Kim, Pan-Suk Kwak, Flash memory device adapted to prevent read failures due to dummy strings ,(2009)