Rail stack array of charge storage devices and method of making same
作者： Igor G. Kouznetzov , Thomas H. Lee , Christopher J. Petti , Andrew J. Walker
DOI:
关键词: Stack (abstract data type) 、 Electrical engineering 、 Charge (physics) 、 Engineering 、 Chemical-mechanical planarization 、 Optoelectronics
摘要: There is provided a monolithic three dimensional array of charge storage devices which includes plurality device levels, wherein at least one surface between two successive levels planarized by chemical mechanical polishing.
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