Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping

摘要: A novel apparatus and method for programming reading a programmable read only memory (EPROM) having trapping dielectric layer (20) sandwiched between two silicon dioxide layers (18, 20) is disclosed that greatly reduces the time of conventional PROM devices. Examples material are oxide-silicon, nitride-silicon oxide (ONO) with buried polysilicon islands. nonconducting functions as an electrical charge medium. This charging acting insulator. conducting gate (24) placed over upper (22). The device (10) programmed in manner. device, however, opposite direction from which it was written, meaning voltages applied to source (14) while drain grounded. For same voltage, reverse potential across trapped region.