Multibit metal nanocrystal memories and fabrication
作者： Chungho Lee , Zengtao Liu , Edwin C. Kan
DOI:
关键词: Metal 、 Electronic engineering 、 Optoelectronics 、 Thin metal 、 Rapid thermal annealing 、 Nanocrystal 、 Gate oxide 、 Coupling (piping) 、 Quantum tunnelling 、 Fabrication 、 Materials science
摘要: Metal nanocrystal memories are fabricated to include higher density states, stronger coupling with the channel, and better size scalability, than has been available semiconductor devices. A self-assembled formation process by rapid thermal annealing of ultra thin metal film deposited on top gate oxide is integrated NMOSFET fabricate such Devices Au, Ag, Pt nanocrystals working in F-N tunneling regime, hot-carrier injection as programming mechanism, demonstrate retention times up l O's, provide 2-bit-per-cell storage capability.
google.com.au 参考文章(48)
David L. O'Meara, Michael Alan Sadd, Bo Jiang, Sucharita Madhukar, Ramachandran Muralidhar, Srikanth B. Samavedam, Bruce E. White, Memory cell and method for programming thereof ,(2000)
Ichiro Fujiwara, Nonvolatile semiconductor memory device and method of operation thereof ,(2000)
Igor G. Kouznetzov, Thomas H. Lee, Christopher J. Petti, Andrew J. Walker, Rail stack array of charge storage devices and method of making same ,(2004)
Kenta Nakamura, Tohru Ueda, Yasumori Fukushima, Method for fabricating semiconductor nanocrystal and semiconductor memory device using the semiconductor nanocrystal ,(1998)
Sakuo Koyata, Takeshi Hattori, Koichiro Saga, Method of cleaning substrate ,(1996)
Donald Stimson Bethune, Sandip Tiwari, Molecular memory & logic ,(2002)
Zengtao Liu, V. Narayanan, Myongseob Kim, Gen Pei, E.C. Kan, Low programming voltages and long retention time in metal nanocrystal EEPROM devices device research conference. pp. 79- 80 ,(2001) , 10.1109/DRC.2001.937881
Avery N. Goldstein, Method for depositing and patterning thin films formed by fusing nanocrystalline precursors ,(1994)
Philip J. Kuekes, R. Stanley Williams, James R. Heath, Molecular wire crossbar memory ,(1999)
C. Bleiker, H. Melchior, A four-state EEPROM using floating-gate memory cells IEEE Journal of Solid-State Circuits. ,vol. 22, pp. 460- 463 ,(1987) , 10.1109/JSSC.1987.1052751