Nano-crystal gate structure for non-volatile memory
作者： Yue-Der Chih , Chrong Jung Lin
DOI:
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摘要: A non-volatile memory device is disclosed having a charge storage layer that incorporates plurality of nano-crystals. substrate source region and drain provided. Select control gates are formed on the substrate. The provided between gate nano-crystals in have size about 1 nm to 10 nm, may be Silicon or Germanium. Writing operations accomplished via hot electron injection, FN tunneling, source-side injection. Erase using tunneling. single polysilicon, which reduces total number processing steps required form device, thus reducing cost.
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