Multilayer Connection Structure and Making Method
作者： Hong-Ji Lee , Hang-Ting Lue , Shih-Hung Chen , Chin-Cheng Yang
DOI:
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摘要: A method provides electrical connections to a stack of contact levels an interconnect region for 3-D stacked IC device. Each level comprises conductive and insulation layers. portion any upper layer is removed expose first create openings each level. set N masks used etch the up including 2N levels. mask effectively half openings. When 3, etches one level, second two levels, third four dielectric may be formed on sidewalls Electrical conductors through with layers electrically insulating from sidewalls.
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