Semiconductor device having multiple fin heights
作者： Chen-Hua Yu , Chen-Nan Yeh , Yu-Rung Hsu , None
DOI:
关键词: Semiconductor device 、 Dielectric 、 Optoelectronics 、 Trench 、 Lithography 、 Photoresist 、 Materials science 、 Etching (microfabrication) 、 Fin 、 Electrical engineering 、 Substrate (printing)
摘要: A semiconductor device having multiple fin heights is provided. Multiple are provided by using masks to recess a dielectric layer within trench formed in substrate. In another embodiment, an implant mold or e-beam lithography utilized form pattern of trenches photoresist material. Subsequent etching steps corresponding the underlying yet masking layers used etch different separately. region may be along bottom isolate fins performing ion and subsequent anneal.
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