Method of forming fin field effect transistor

摘要: According to some embodiments, a fin type active region is formed under an exposure state of sidewalls on semiconductor substrate. A gate insulation layer upper part the and sidewalls, device isolation film surrounds height region. The are partially exposed by opening film. filled with conductive that covers region, forming electrode. Source drain regions portion where electrode not. may be easily separated problems causable etch by-product can substantially reduced, leakage current channel electric field concentration onto edge prevented.