Semiconductor structure and manufacturing method of the same
作者： Kuang-Yeu Hsieh , Hang-Ting Lue , Shih-Hung Chen
DOI:
关键词:
摘要: A semiconductor structure and a manufacturing method of the same are provided. The includes base, stacked doped layer. is formed on wherein comprises plurality conductive strips insulating strips, one located between adjacent two has first side wall, long edge wall extended along channel direction. layer in by an ion implantation applied to acute angle contained direction wall.
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