Nonvolatile semiconductor storage device and method for manufacturing same
作者： Masahiro Kiyotoshi
DOI:
关键词: Periodic Interval 、 Semiconductor 、 Electrical engineering 、 Substrate (printing) 、 Semiconductor storage 、 Bit line 、 Optoelectronics 、 Layer (electronics) 、 Materials science 、 Electrode
摘要: A nonvolatile semiconductor storage device includes: a plurality of stacked units juxtaposed on major surface substrate, each unit aligning in first direction parallel to the substrate; and gate electrode second non-parallel direction. Each includes layers via an insulating layer. The are so that spacings between adjacent alternately spacing larger than spacing. is provided at periodic interval four times size half pitch F bit line. protruding portion enters into gap units. film, charge layer, film side face layer portion.
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