Semiconductor memory and method of manufacturing the same
作者： Masahiro Kiyotoshi , Fumitaka Arai , Yoshio Ozawa , Riichiro Shirota , Akihito Yamamoto
DOI:
关键词:
摘要: A semiconductor memory includes a plurality of stripe-like active areas formed by stacking, in direction perpendicular to substrate, layers extending parallel the first gate electrode on side surfaces areas, being second substrate. The are patterned self-alignment with each other, intersections and form cells, cells an intersecting plane share electrode.
google.ca 参考文章(34)
Allen U. Huang, Yue-Song He, Kent K. Chang, Process to improve read disturb for NAND flash memory devices ,(1999)
Fumitaka Arai, Riichiro Shirota, Makoto Mizukami, Semiconductor memory device and method of fabricating the same ,(2006)
Leonard Forbes, 4F2 EEPROM NROM memory arrays with vertical devices ,(2004)
Leonard Forbes, Vertical NAND flash memory array ,(2003)
Jan Boris Philipp, Thomas Happ, Stacked SONOS memory ,(2007)
Nima Mokhlesi, Roy Scheuerlein, Method of making three dimensional NAND memory ,(2007)
K. Sagara, T. Kure, S. Shukuri, J. Yugami, N. Hasegawa, H. Shinriki, H. Goto, H. Yamashita, E. Takeda, A 0.72 mu m/sup 2/ recessed STC (RSTC) technology for 256 Mbit DRAMs using quarter-micron phase-shift lithography symposium on vlsi technology. pp. 10- 11 ,(1992) , 10.1109/VLSIT.1992.200618
Erh-Kun Lai, Hang-Ting Lue, Yi-Hsuan Hsiao, Jung-Yu Hsieh, Chi-Pin Lu, Szu-Yu Wang, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Jeng Gong, Kuang-Yeu Hsieh, Rich Liu, Chih-Yuan Lu, A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory international electron devices meeting. pp. 1- 4 ,(2006) , 10.1109/IEDM.2006.346903
Soon-Moon Jung, Jaehoon Jang, Wonseok Cho, Hoosung Cho, Jaehun Jeong, Youngchul Chang, Jonghyuk Kim, Youngseop Rah, Yangsoo Son, Junbeom Park, Min-Sung Song, Kyoung-Hon Kim, Jin-Soo Lim, Kinam Kim, None, Three Dimensionally Stacked NAND Flash Memory Technology Using Stacking Single Crystal Si Layers on ILD and TANOS Structure for Beyond 30nm Node international electron devices meeting. pp. 1- 4 ,(2006) , 10.1109/IEDM.2006.346902
A.J. Walker, S. Nallamothu, E.-H. Chen, M. Mahajani, S.B. Herner, M. Clark, J.M. Cleeves, S.V. Dunton, V.L. Eckert, J. Gu, S. Hu, J. Knall, M. Konevecki, C. Petti, S. Radigan, U. Raghuram, J. Vienna, M.A. Vyvoda, 3D TFT-SONOS memory cell for ultra-high density file storage applications symposium on vlsi technology. pp. 29- 30 ,(2003) , 10.1109/VLSIT.2003.1221070