Vertical semiconductor devices
作者： Lee Seung-Min , Kim Shin-Young , Lee Jae-Jung , Son Yoon-Hwan , Kwon Joon-Young
DOI:
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摘要: A vertical memory device may include a conductive pattern structure, pad plurality of channel structures, first dummy structures and second structures. The structure be in region substrate, extend direction. the substrate adjacent to each opposite sides contact side structure. through regularly arranged on substrate. disposed portion thereof. Each have width direction, direction greater than width.
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