Vertical memory devices
作者： Jee-Yong Kim , Dae-Seok Byeon , Byung-Jin Lee
DOI:
关键词: Optoelectronics 、 Materials science 、 Substrate (printing) 、 Vertical direction 、 Electronic engineering
摘要: A vertical memory device includes a substrate, gate lines, channels, contacts and contact spacers. The lines are stacked on top of each other the substrate. spaced apart from in direction with respect to surface include step portions that extend parallel channels through direction. lines. spacers selectively formed along sidewalls portion contacts.
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