作者: Go-Hyun Lee , Chang-Man Son , Young-Ock Hong , Jin-Ho Kim , Sung-Lae Oh
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摘要: A semiconductor memory device includes a substrate defined with cell regions and contact region between the regions; dielectric structure formed over region; block having parts which are respectively regions, coupling part is couples parts, through accommodates structure; peripheral circuit under block; bottom wiring lines disposed circuit, electrically coupled circuit; top plugs passing lines.