Semiconductor memory device including 3-dimensional structure and method for manufacturing the same

作者: Go-Hyun Lee , Chang-Man Son , Young-Ock Hong , Jin-Ho Kim , Sung-Lae Oh

DOI:

关键词:

摘要: A semiconductor memory device includes a substrate defined with cell regions and contact region between the regions; dielectric structure formed over region; block having parts which are respectively regions, coupling part is couples parts, through accommodates structure; peripheral circuit under block; bottom wiring lines disposed circuit, electrically coupled circuit; top plugs passing lines.

参考文章(13)
Jee-Yong Kim, Dae-Seok Byeon, Byung-Jin Lee, Vertical memory devices ,(2016)
Masaaki Higashitani, Peter Rabkin, 3D Non-Volatile Memory With Metal Silicide Interconnect ,(2014)
Yoonkyung Choi, Myoungsoo Kim, Eun Young Lee, Sungil Jo, Semiconductor devices and methods of fabricating the same ,(2014)
Albert Fayrushin, Dong-Hoon Jang, Chang-Hyun Lee, Hyun-Jung Kim, Memory devices having semiconductor patterns on a substrate and methods of manufacturing the same ,(2014)
Chang Seok Kang, Jae Duk Lee, Dong Seog Eun, Seung Hyun Lim, Jae Woo Lim, Woo Sung Lee, Dae Hoon Bae, Hanmei Choi, Jong Won Kim, Young Woo Park, Vertical memory devices having dummy channel regions ,(2017)
Mullard Ltd, Semiconductor Devices ,(1985)