Vertical memory devices having dummy channel regions
作者： Chang Seok Kang , Jae Duk Lee , Dong Seog Eun , Seung Hyun Lim , Jae Woo Lim
DOI:
关键词:
摘要: A memory device includes a plurality of channel regions that each extend in direction perpendicular to an upper surface substrate, gate electrode layers and insulating stacked on the substrate adjacent regions, electrodes extending different lengths, dummy first ends layers, wherein layer formed below regions.
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