Semiconductor memory device and method for manufacturing same
作者： Megumi Ishiduki , Masaru Kidoh , Ryota Katsumata , Hideaki Aochi , Yosuke Komori
DOI:
关键词: Substrate (electronics) 、 Silicon oxide 、 Lamination 、 Electrode 、 Materials science 、 Silicon nitride 、 Layer (electronics) 、 Optoelectronics 、 Electronic engineering 、 Flash memory 、 Silicon
摘要: A laminated body is formed by alternately laminating a plurality of dielectric films and electrode on silicon substrate. Next, through hole extending in the lamination direction body. selective nitridation process performed to selectively form charge layer made nitride region an inner surface corresponding film. high-pressure oxidation block oxide between tunnel side hole. Thus, flash memory can be manufactured which split for each
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