Backside illuminated image sensor and method of manufacturing the same
作者： Yu-Ku Lin , Chun Che Lin , Ying-Lang Wang , Shiu-Ko Jangjian , Chuan-Pu Liu
DOI:
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摘要: A backside illuminated (BSI) image sensor device includes: a substrate including front side and back side; multilayer structure over the radiation-sensing region in substrate. The is configured to receive radiation wave entering from transmitting through structure. includes first high-k dielectric layer, metal silicide layer second layer. located side. sandwiched between
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