Method of manufacturing three dimensional semiconductor memory device

摘要: A method of manufacturing a three-dimensional semiconductor memory device is provided. The includes alternately stacking first insulation film, sacrificial alternating second films and films, third film on substrate. channel hole formed to expose portion the substrate while passing through film. further forming pattern exposed in by epitaxial growth. Forming lower doping an impurity into upper are all performed in-situ, doped region undoped region.