Structure and production process of a microelectronic 3d memory device of flash nand type
作者： Gabriel Molas , Barbara De Salvo , Thomas Ernst , Stephane Becu
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摘要: A microelectronic flash memory device including a plurality of cells transistors fitted with matrix channels connecting block common source to second on which bit lines rest, the also being formed by gates at least one gate material, first selection coating channels, control each same row and matricial arrangement, or more based superposition layers layer dielectrical charge store zone, material.
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