Memory devices having semiconductor patterns on a substrate and methods of manufacturing the same
作者： Albert Fayrushin , Dong-Hoon Jang , Chang-Hyun Lee , Hyun-Jung Kim
DOI:
关键词:
摘要: A memory device may include a plurality of semiconductor patterns on substrate including first impurity regions doped at concentration, second portions the contacting and channel patterns, gate structures, third adjacent to end fourth between regions. The be concentration which lower than concentrations.
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