Semiconductor memory device and method of fabricating the same
作者： Fumitaka Arai , Riichiro Shirota , Makoto Mizukami
DOI:
关键词: Stack (abstract data type) 、 Gate oxide 、 Conductivity 、 Gate dielectric 、 Electrical engineering 、 Semiconductor memory 、 Layer (electronics) 、 Materials science 、 Semiconductor 、 Metal gate 、 Optoelectronics
摘要: A semiconductor memory device includes: a substrate, on which an impurity diffusion layer is formed in cell array area; gate wiring stack body the area, multiple wirings are stacked and separated from each other with insulating films; film side surface of body, charge storage contained; pillar-shaped layers arranged along one surfaces opposed to via film, having same conductivity type as layer; data lines be contact upper intersect wirings.
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