Non-volatile semiconductor memory and method for controlling a non-volatile semiconductor memory
作者： Naoki Kusunoki , Fumitaka Arai , Nobutoshi Aoki , Hiroyoshi Tanimoto , Riichiro Shirota
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摘要: A non-volatile semiconductor memory includes a plurality of cell transistors, each the transistors includes: source region having first conductivity type and in contact with buried insulating layer on supporting substrate; drain layer; channel provided between so as to layer, wherein thickness is more than one nm not value obtained by adding seven half gate length transistor.
lens.org 参考文章(23)
Atsushi Kamashita, Junction-type field-effect transistor with improved impact-ionization resistance ,(1998)
Robert Chau, Been-Yih Jin, Doulgas Barlage, Novel field effect transistor and method of fabrication ,(2003)
Ryoko Miyanaga, Toshiya Yokogawa, Kenya Yamashita, Osamu Kusumoto, Kunimasa Takahashi, Masao Uchida, Makoto Kitabatake, Semiconductor substrate, semiconductor device and method for fabricating the same ,(2002)
Tomoharu Tanaka, Hiroshi Nakamura, Ken Takeuchi, Riichiro Shirota, Fumitaka Arai, Susumu Fujimura, Nonvolatile Semiconductor Memory Device ,(2007)
Jin Hyo Jung, STI structure and fabricating methods thereof ,(2003)
Katsuhiro Suma, Hideto Hidaka, Takahiro Tsuruda, Semiconductor memory device including an SOI substrate ,(2001)
Koucheng Wu, Nor-type channel-program channel-erase contactless flash memory on SOI ,(2005)
Arup Bhattacharyya, Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer ,(2005)
Shigenobu Maeda, Takuji Matsumoto, Tatsuya Kunikiyo, Nonvolatile semiconductor memory device and semiconductor integrated circuit ,(2001)
Mitsuhiro Noguchi, Akira Goda, Semiconductor device with source line and fabrication method thereof ,(2003)