Semiconductor device with source line and fabrication method thereof

摘要: A semiconductor device comprises a plurality of field-effect transistors and common source line. Each the memory cell includes region first conductivity type formed in substrate, drain second region, an information storage portion capable electrically writing erasing data, at least one control gate electrode including conductive layer. The line is on type, connects regions transistors. layer that has film thickness substantially equal to included same material as electrode.